2SC2710 Datasheet - Toshiba Semiconductor

2SC2710 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm High DC current gain: hFE (1) = 100~320 Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 300 150 -55~150.

2SC2710_ToshibaSemiconductor.pdf