Datasheet4U Logo Datasheet4U.com

2SC2712 - Silicon NPN Transistor

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) (6) Low noise: NF = 1 dB (typ. ), 10 dB (max) (7) Complementary to 2SA1162 3. Packaging 2SC2712 S-Mini 1: Base 2: Emitter 3: Collector ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-10 2022-02-.

📥 Download Datasheet

Datasheet preview – 2SC2712

Datasheet Details

Part number 2SC2712
Manufacturer Toshiba Semiconductor
File Size 473.74 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2712 Datasheet
Additional preview pages of the 2SC2712 datasheet.
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SA1162 3. Packaging 2SC2712 S-Mini 1: Base 2: Emitter 3: Collector ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-10 2022-02-03 Rev.7.0 4.
Published: |