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2SC2714
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714
High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
Unit: mm
• Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation Junction temperature Storage temperature range
PC
100
mW
Tj
125
°C
Tstg
−55 to 125
°C
S-MINI JEDEC
TO-236
Note: Using continuously under heavy loads (e.g.
2SC2714 Datasheet
