2SC3265 Datasheet - Toshiba Semiconductor

2SC3265 Silicon NPN TRANSISTOR

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100 to 320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ba.

2SC3265_ToshibaSemiconductor.pdf