2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Low Frequency Power Amplifier Applications Power Switching Applications
- High DC current gain: h FE (1) = 100 to 320
- Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 m A, IB = 20 m A)
- plementary to 2SA1298
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
30 25 5 800 160 200 150
- 55 to 150
V V V m A m A m W °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
TO-236MOD temperature, etc.) may cause this product to decrease in the
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