2SC3265 Datasheet - Toshiba Semiconductor

2SC3265, Silicon NPN TRANSISTOR

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications .

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2SC3265_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC3265

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

170.90 KB

Description:

Silicon NPN TRANSISTOR

Applications

* Power Switching Applications
* High DC current gain: hFE (1) = 100 to 320
* Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA)
* Complementary to 2SA1298 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-b

2SC3265 Distributors

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2SC3265 Silicon NPN TRANSISTOR Toshiba Semiconductor

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