Datasheet Details
- Part number
- 2SC3265
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 170.90 KB
- Datasheet
- 2SC3265_ToshibaSemiconductor.pdf
- Description
- Silicon NPN TRANSISTOR
2SC3265 Description
2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications .
2SC3265 Applications
* Power Switching Applications
* High DC current gain: hFE (1) = 100 to 320
* Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
* Complementary to 2SA1298
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-b
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