2SC4539 Datasheet - Toshiba Semiconductor

2SC4539 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applications 2SC4539 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) High speed switching time: tstg = 0.3 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-ba.

2SC4539 Datasheet (120.62 KB)