* High-speed switching
* High collector to base voltage VCBO
* Wide area of safe operation (ASO)
* Satisfactory linearity of forward current transfer ratio hFE
* Full-pack package which can be installed to the heat sink with one / screw 14.0±0.5 Solder Dip (
2SC4533
Panasonic Semiconductor
241.61 KB
Npn transistor.
Power Transistors
2SC4533
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.
📁 Related Datasheet
2SC4531 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4531
DESCRIPTION ·With TO-3P(H)IS package ·High.
2SC4531 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
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2SC4531
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low saturation voltage ·B.
2SC4532 - NPN Transistor
(ETC)
..
.
2SC4533 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package ·High speed switc.
2SC4533 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
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DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Wide Ar.
2SC4536 - NPN TRANSISTOR
(NEC)
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4536 is designed.
2SC4536 - NPN Transistor
(INCHANGE)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4536
DESCRIPTION ·Low Noise
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distort.
2SC4537 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4537
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC4537
Absolute Max.
