* q q q 0.7 4.0 0.65 max. 1.0 1.0 High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power
2SC4502
Panasonic Semiconductor
40.29 KB
Npn transistor.
Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0..
📁 Related Datasheet
2SC4500 - NPN TRANSISTOR
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2SC4500(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
DPAK
4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector
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2SC4500 - Silicon NPN Transistor
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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2SC4500L - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4500(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
DPAK
4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector
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2SC4500L - Silicon NPN Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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2SC4500S - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4500(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
DPAK
4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector
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2SC4500S - Silicon NPN Transistor
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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2SC4501 - Silicon NPN Transistor
(Hitachi Semiconductor)
..
2SC4501(L)/(S)
Silicon NPN Epitaxial
Application
High gain amplifier and medium speed switching
Outline
DPAK
4 4 1 2 3 12 1. B.
2SC4501 - Silicon NPN Transistor
(Renesas)
2SC4501(L)/(S)
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Application
High gain amplifier and medium speed switching
Outline
DPAK
4 4 1 2 3 12 1. Base 2. Collector 3. E.
