2SC4604 Datasheet - Toshiba Semiconductor

2SC4604 NPN TRANSISTOR

2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High-speed switching: tstg = 0.5 µs (typ.) Complementary to 2SA1761 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ju.

2SC4604_ToshibaSemiconductor.pdf