2SC4603R Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min. High Switching Speed. High Reliability. 100% avalanche tested.

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Datasheet Specifications

Part number: 2SC4603R
Manufacturer: Inchange Semiconductor
File Size: 190.43 KB
Datasheet: 2SC4603R_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V

2SC4603R Distributors

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2SC4603R Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC4603R-like datasheet