2SC4682 Datasheet - Toshiba Semiconductor

2SC4682 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications 2SC4682 Unit: mm Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 30 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pul.

2SC4682_ToshibaSemiconductor.pdf