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2SC4687 - NPN Transistor

2SC4687 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4687 .
Low Collector Saturation Voltage. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min). Good Linearity of hFE. Minimum Lot-to-.

2SC4687 Applications

* Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SC4687
Manufacturer
INCHANGE
File Size
184.04 KB
Datasheet
2SC4687-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC4687-like datasheet