Datasheet4U Logo Datasheet4U.com

2SC4662 - NPN Transistor

2SC4662 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4662 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

2SC4662 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Co

📥 Download Datasheet

Preview of 2SC4662 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SC4662
Manufacturer
INCHANGE
File Size
178.21 KB
Datasheet
2SC4662-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC4660 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4663 - Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SC4664 - Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SC4666 - Silicon NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4667 - Silicon NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4668 - Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SC4669 - Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SC460 - NPN TRANSISTOR (Hitachi Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC4662-like datasheet