Datasheet4U Logo Datasheet4U.com

2SC4689 - NPN Transistor

2SC4689 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Compleme.

2SC4689 Applications

* Power amplifier applications
* Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base voltage 5

📥 Download Datasheet

Preview of 2SC4689 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SC4689
Manufacturer
INCHANGE
File Size
193.27 KB
Datasheet
2SC4689-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC4680 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC4681 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4682 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4683 - Transistor (Toshiba)
  • 2SC4684 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4685 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4686 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4686A - NPN TRANSISTOR (Toshiba Semiconductor)

📌 All Tags

INCHANGE 2SC4689-like datasheet