2SC4935 Datasheet - Toshiba Semiconductor

2SC4935 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications 2SC4935 Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VEBO IC IB PC 5V 3A 0.3 A 2 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg

2SC4935_ToshibaSemiconductor.pdf