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2SK1530 Datasheet - Toshiba Semiconductor

2SK1530 Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SJ201 : VDSS = 200V : |Yfs| = 5.0 S (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Symbol VDSS VGSS ID PD Tc Tstg Rating 200 ±20 12 150 1.

2SK1530_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK1530

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

232.78 KB

Description:

Silicon n-channel mosfet.

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2SK1530 2SK1530 Silicon N-Channel MOSFET Toshiba Semiconductor

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