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2SK2549
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2549
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 2.5-V gate drive
z Low drain−source ON resistance : RDS (ON) = 0.29 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 16 V) z Enhancement mode : Vth = 0.5 to 1.1 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS 16 V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
16
V
Gate−source voltage
VGSS ±8 V
Drain current
DC (Note 1) Pulse (Note 1)
ID IDP
2 A
6
Drain power dissipation Drain power dissipation
(Note 2)
PD PD
0.5 W 1.
2SK2549 Datasheet
