2SK2510 Description
The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter).
2SK2510 Key Features
- Super Low On-Resistance RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mΩ (VGS = 4 V, ID = 20 A)
- Low Ciss
- Built-in G-S Protection Diode