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2SK2514 - SWITCHING N-CHANNEL POWER MOS FET

General Description

The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

4.7 MAX.

1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1.

Super Low On-Resistance RDS (on)1 ≤ 15 mΩ (VGS = 10 V,

Key Features

  • 15.7 MAX. 4 3.2±0.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) • Super Low On-Resistance RDS (on)1 ≤ 15 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 23 mΩ (VGS = 4 V, ID = 25 A) 1.0 FEATURES 15.7 MAX. 4 3.2±0.