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2SK2511 - SWITCHING N-CHANNEL POWER MOS FET

General Description

The 2SK2511 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

4.7 MAX.

Key Features

  • Super Low On-Resistance RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0.
  • Low Ciss Ciss = 1 210 pF TYP.
  • Built-in G-S Protection Diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2511 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 FEATURES • Super Low On-Resistance RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0 • Low Ciss Ciss = 1 210 pF TYP.