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2SK2512 - SWITCHING N-CHANNEL POWER MOS FET

General Description

The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2.
  • Low Ciss Ciss = 2 100 pF TYP.
  • Built-in G-S Protection Diode.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2510 SWITCHING N-CHANNEL POWER MOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 • Low Ciss Ciss = 2 100 pF TYP.