2SK2512 Description
The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter).
2SK2512 Key Features
- Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)
- Low Ciss
- Built-in G-S Protection Diode