Datasheet Details
Part number:
2SK2719
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
268.75 KB
Description:
N-Channel MOS Type Field Effect Transistor
2SK2719_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SK2719
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
268.75 KB
Description:
N-Channel MOS Type Field Effect Transistor
Features
* failure of which may cause loss of human life, bodily injury, sApplications
* Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ. ) High forward transfer admittance: |Yfs| = 2.6 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating2SK2719 Distributors
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