2SK2733 Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Part number:

2SK2733

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

252.48kb

Download:

📄 Datasheet

Description:

Silicon n-channel mos type field effect transistor.

2SK2733 Application

• Applications Unit: mm l Low drain
• source ON resistance : RDS (ON) = 8.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.9 S (typ.

TAGS

📁 Related Datasheet

2SK2730 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A (Z) 2nd. Edition September 1997 Features • • • • Low on-resistance High sp.

2SK2730 - Silicon N-Channel MOSFET (Renesas)
2SK2730 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratin.

2SK2731 - Transistor (Rohm)
Transistors Interface and switching (30V, 200mA) 2SK2731 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easil.

2SK2731 - N-Channel MOSFET (Kexin)
SMD Type MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) ＜ 2.8Ω (VGS = 10V) ● RDS(ON) ＜ 4.5Ω (VGS = 4V) N-Channel MOSFET 2SK2731 SOT-23 .

2SK2734 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 1st. Edition Features • Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 .

2Sk2734 - Silicon N-Channel MOSFET (Renesas)
2SK2734 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate d.

2SK2735 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. •.

2SK2735L - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. •.

2SK2735S - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. •.

2SK2736 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = .