2SK3079 Datasheet - Toshiba Semiconductor

2SK3079 N-Channel MOSFET

2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC S Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range YMBOL VDSS 10 VGSS 5 ID PD 20. Tch 150 Tstg 45~150 ° 5 0 RATING UNIT V V A W °C C : Tc =.

2SK3079 Datasheet (164.77 KB)