2SK3079A Datasheet - Toshiba Semiconductor

2SK3079A N-Channel MOSFET

2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Output power: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 10 3 3 20.0 150 45~1.

2SK3079A Datasheet (114.22 KB)