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2SK3762 - N-Channel MOSFET

2SK3762 Description

www.DataSheet4U.com 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡W ) 2SK3762 unit *F‚ *‚ * Switch.

2SK3762 Applications

* 3.84
* }0.2 3.84
* } 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max.
* Low drain-source ON resistance: R DS (ON) = 5.6ƒ¶ (typ. ) High forward transfer admittance: |Yfs| = 2.0 S (typ. ) Low leakage current: IDSS = 100 ƒÊ A (V DS = 720 V)

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N-Channel MOSFET Toshiba Semiconductor
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