Datasheet Specifications
- Part number
- 2SK3766
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 307.89 KB
- Datasheet
- 2SK3766_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOS Type FET
Description
2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Switching Regulator Applications <.
Applications
* Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ. ) High forward transfer admittance: |Yfs| = 0.65 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 252SK3766 Distributors
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