Part number:
2SK3766
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
307.89 KB
Description:
Silicon n-channel mos type fet.
2SK3766_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SK3766
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
307.89 KB
Description:
Silicon n-channel mos type fet.
2SK3766, Silicon N-Channel MOS Type FET
2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate
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