Datasheet4U Logo Datasheet4U.com

2SK3766 Datasheet - Toshiba Semiconductor

2SK3766_ToshibaSemiconductor.pdf

Preview of 2SK3766 PDF
2SK3766 Datasheet Preview Page 2 2SK3766 Datasheet Preview Page 3

Datasheet Details

Part number:

2SK3766

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

307.89 KB

Description:

Silicon n-channel mos type fet.

2SK3766, Silicon N-Channel MOS Type FET

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor 2SK3766-like datasheet