2SK3766 Datasheet - Toshiba Semiconductor

2SK3766, Silicon N-Channel MOS Type FET

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Switching Regulator Applications <.

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2SK3766_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3766

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

307.89 KB

Description:

Silicon N-Channel MOS Type FET

Applications

* Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ. ) High forward transfer admittance: |Yfs| = 0.65 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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2SK3766 Silicon N-Channel MOS Type FET Toshiba Semiconductor

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