2SK4026 - N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ. ) High forward transfer admittance: |Yfs| = 0.85 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ０．９１．６５．５±０．２１．１±０．２４．１±０．２５．７０．６ MAX ２．３２．３２．３±０．２０．６±０．１５０．６±０．１５ Absolute Maximum Ratings (Ta = 25°C) １２３ Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain curren.

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