2SK4005-01MR - Power MOSFET
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Op.
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. DRAWN DATE Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05 Date Spec. No. Device Name Type Name : : : : NAME APPROVED SPECIFICATION Jan.-31-2005 2SK4005-.
