2SK4015 Datasheet - Toshiba Semiconductor

2SK4015 - N-Channel MOSFET

www.DataSheet4U.com 2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOS VI) 2SK4015 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drai

2SK4015 Features

* Unintended Use includes, without limitation, equipment used in nuclear fac

2SK4015_ToshibaSemiconductor.pdf