2SK4016 Datasheet - Toshiba Semiconductor

2SK4016 N-Channel MOSFET

www.DataSheet4U.com 2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOS VI) 2SK4016 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltag.

2SK4016 Datasheet (236.98 KB)