2SK4019 Overview
mm ０．６ MAX． z 4 V gate drive z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.17 Ω (typ.) : |Yfs| = 4.5 S (typ.) １．６ ０．９ ４．１±０．２ ５．７ ５．５±０．２ １．１±０．２.
2SK4019 Datasheet Details
| Part number | 2SK4019 |
|---|---|
| Datasheet | 2SK4019_ToshibaSemiconductor.pdf |
| File Size | 797.18 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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