2SK4018 Overview
mm ０．６ MAX． １．６ z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.28 Ω (typ.) : IDSS = 100 μA (max) (VDS = 100 V).
Datasheet Details
| Part number | 2SK4018 |
|---|---|
| Datasheet | 2SK4018_ToshibaSemiconductor.pdf |
| File Size | 800.27 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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