A1160 Datasheet - Toshiba Semiconductor

A1160, 2SA1160

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm <.

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A1160_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

A1160

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

151.12 KB

Description:

2SA1160

Features

* s (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U. S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in co

Applications

* Medium Power Amplifier Applications 2SA1160 Unit: mm
* High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE =
* 1 V, IC =
* 0.5 A) : hFE (2) = 60 (min), 120 (typ. ) (VCE =
* 1 V, IC =
* 4 A)
* Low saturation voltage : VCE (sat) =

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