A1150 2SA1150

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm * High hFE: hFE .

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Datasheet Specifications

Part number: A1150
Manufacturer: Toshiba ↗ Semiconductor
File Size: 157.80 KB
Datasheet: A1150-ToshibaSemiconductor.pdf
Description: 2SA1150

Applications

* Unit: mm
* High hFE: hFE = 100~320
* Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
* 35 V Collector-emitter voltage VCEO
* 30 V Emitter-base voltage VEBO
* 5 V Collector

A1150 Distributors

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A1150 2SA1150 Toshiba Semiconductor

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