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A1150 Datasheet - Toshiba Semiconductor

A1150 2SA1150

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: hFE = 100~320 Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power d.

A1150-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

A1150

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

157.80 KB

Description:

2sa1150.

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A1150 A1150 2SA1150 Toshiba Semiconductor