2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2712 Small package Unit: mm Absolute Maximum Ratings
A1162-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
A1162
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
166.73 KB
Description:
2sa1162.