C3295 Datasheet - Toshiba Semiconductor

C3295 2SC3295

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Switching Applications High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range .

C3295_ToshibaSemiconductor.pdf