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C5000 Datasheet - Toshiba Semiconductor

C5000 2SC5000

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 25 W Junction temperature Tj 150 °C Storage tempera.

C5000-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

C5000

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

122.33 KB

Description:

2sc5000.

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C5000 C5000 2SC5000 Toshiba Semiconductor

C5000 Distributor