CBS05F30 - Schottky Barrier Diode

Toshiba Semiconductor

Datasheet Details

Part number	CBS05F30
Manufacturer	Toshiba Semiconductor
File Size	123.60 KB
Description	Schottky Barrier Diode
Datasheet	CBS05F30_ToshibaSemiconductor.pdf

(1) Low forward voltage: VF(3) = 0.38 V (typ. ) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 500 mA Non-repetitive peak forward surge current IFSM (Note 2) 3 A Junction temperature Tj  125  Storage temperature Tstg  -55.

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Published: Mar 29, 2012 |