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CBS05F30 Datasheet - Toshiba Semiconductor

CBS05F30 - Schottky Barrier Diode

CBS05F30 Features

* (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse

CBS05F30_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

CBS05F30

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

123.60 KB

Description:

Schottky barrier diode.

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