Datasheet Specifications
- Part number
- CBS05F30
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 123.60 KB
- Datasheet
- CBS05F30_ToshibaSemiconductor.pdf
- Description
- Schottky Barrier Diode
Description
Schottky Barrier Diode Silicon Epitaxial CBS05F30 1.Applications * High-Speed Switching 2..
Features
* (1) Low forward voltage: VF(3) = 0.38 V (typ. ) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit ReverseCBS05F30 Distributors
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