CBS10S30 - Schottky Barrier Diode
Schottky Barrier Diode Silicon Epitaxial CBS10S30 1.
Applications High-Speed Switching 2.
Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125 Storage temp
