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CBS10S30 Schottky Barrier Diode

CBS10S30 Description

Schottky Barrier Diode Silicon Epitaxial CBS10S30 1.Applications * High-Speed Switching 2.Packaging and Internal Circuit CBS10S30 CST2B 1.

CBS10S30 Applications

* High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified c

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Schottky Barrier Diode Toshiba
Toshiba CBS10S30-like datasheet