Datasheet4U Logo Datasheet4U.com

CBS10S30 Datasheet - Toshiba

CBS10S30 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temp.

CBS10S30-Toshiba.pdf

Preview of CBS10S30 PDF
CBS10S30 Datasheet Preview Page 2 CBS10S30 Datasheet Preview Page 3

Datasheet Details

Part number:

CBS10S30

Manufacturer:

Toshiba ↗

File Size:

135.00 KB

Description:

Schottky barrier diode.

CBS10S30 Distributor

📁 Related Datasheet

CBS05F30 Schottky Barrier Diode (Toshiba Semiconductor)

CBS084A00-TJN LCM MODULE (AV-DISPLAY)

CBSL1 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

CBSL100 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

CBSL15 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

CBSL150 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

CBSL30 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

CBSL30B NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

TAGS

CBS10S30 CBS10S30 Schottky Barrier Diode Toshiba