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CBS10S30 Datasheet - Toshiba

CBS10S30 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temp.

CBS10S30 Datasheet (135.00 KB)

Preview of CBS10S30 PDF

Datasheet Details

Part number:

CBS10S30

Manufacturer:

Toshiba ↗

File Size:

135.00 KB

Description:

Schottky barrier diode.

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CBS10S30 Schottky Barrier Diode Toshiba

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