CBS10S30 Datasheet - Toshiba

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CBS10S30 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CBS10S30 1.Applications * High-Speed Switching 2.Packaging and Internal Circuit CBS10S30 CST2B 1.

CBS10S30-Toshiba.pdf

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Datasheet Details

Part number:

CBS10S30

Manufacturer:

Toshiba ↗

File Size:

135.00 KB

Description:

Schottky Barrier Diode

Applications

* High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified c

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CBS10S30 Schottky Barrier Diode Toshiba

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