CBSL150 Datasheet, Transistor, Advanced Semiconductor

CBSL150 Features

• Transistor
• Internal Input/Output Matching
• PG = 9.0 dB Typ. at 150 W/ 900 MHz
• Omnigold™ Metalization System E D C .1925 F H I N L J DIM A MINIMUM inches / mm .080x45

PDF File Details

Part number:

CBSL150

Manufacturer:

Advanced Semiconductor

File Size:

18.31kb

Download:

📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG (C) FEATURES:

TAGS

CBSL150

Advanced Semiconductor

📁 Related Datasheet

CBSL15 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 ..

CBSL1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipmen.

CBSL100 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E.

CBSL30 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The.

CBSL30B - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45°.

CBSL6 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G.

CBSL60B - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D.

CBS05F30 - Schottky Barrier Diode (Toshiba Semiconductor)
Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2.

CBS084A00-TJN - LCM MODULE (AV-DISPLAY)
C-7 :(086)0755-26919178 : (086)0755 -26911092 Http://.av-display..cn SHENZHEN AV-DISPLAY CO.,LTD Address:North East C-7 Building, Wenchang S.

CBS10S30 - Schottky Barrier Diode (Toshiba)
Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathod.