CMZ12 - Silicon Diffused Type Zener Diode
○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm Average power dissipation : P = 2 W Zener voltage : VZ = 12 to 51 V Suitable for compact assembly due to small surface mount package “M FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1.
Anode 2.
Cathode Junction temperature Tj 40 to 150 °C Storage temper
CMZ12 Features
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