Datasheet4U Logo Datasheet4U.com

CMZ12 Datasheet - Toshiba Semiconductor

CMZ12 - Silicon Diffused Type Zener Diode

○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm Average power dissipation : P = 2 W Zener voltage : VZ = 12 to 51 V Suitable for compact assembly due to small surface mount package “M FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1.

Anode 2.

Cathode Junction temperature Tj 40 to 150 °C Storage temper

CMZ12 Features

* oftware and technology may be controlled under the applicable export la

CMZ12-ToshibaSemiconductor.pdf

Preview of CMZ12 PDF
CMZ12 Datasheet Preview Page 2 CMZ12 Datasheet Preview Page 3

Datasheet Details

Part number:

CMZ12

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

288.88 KB

Description:

Silicon diffused type zener diode.

📁 Related Datasheet

📌 All Tags