GT15Q102 Datasheet - Toshiba Semiconductor

GT15Q102, Silicon N-Channel IGBT

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm The 3rd Generation Enha.

Applications

* Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
* Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Ju

GT15Q102_ToshibaSemiconductor.pdf