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GT15N10 MOSFET

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Description

GOFORD GT15N10 .
Trench Power MV MOSFET technology. Low RDS(ON). Low Gate Charge. Optimized for fast-switching applications General Features.

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Datasheet Specifications

Part number
GT15N10
Manufacturer
GOFORD
File Size
3.90 MB
Datasheet
GT15N10-GOFORD.pdf
Description
MOSFET

Features

* VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 100V 6.6 mΩ 8.9 mΩ 15 A Schematic diagram Marking and pin assignment
* High power and current handing capability
* Lead free product is acquired

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