GT15J341 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

(1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ. ) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit GT15J341 TO-220SIS 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT15J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 Collector current.

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Published: Jan 30, 2024 |