GT15J341

Silicon N-Channel IGBT

Toshiba

GT15J341 Features

* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit GT15J341 TO-220SIS 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT15J341 4. Ab

GT15J341 Datasheet (252.07 KB)

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GT15J341

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Toshiba ↗

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252.07 KB

Description:

Silicon n-channel igbt.

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GT15J341 Silicon N-Channel IGBT Toshiba

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GT15J341 Features

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