GT15J321 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit.

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Datasheet Specifications

Part number: GT15J321
Manufacturer: Toshiba ↗ Semiconductor
File Size: 311.69 KB
Datasheet: GT15J321_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Fast Switching Applications Unit: mm
* The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ. ) Low saturation Voltage: VCE (sat) = 1.90 V (typ. ) FRD included between emitter and collector. Maximum Ratings (T

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GT15J321 Silicon N-Channel IGBT Toshiba Semiconductor

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