Datasheet Details
Part number:
GT15J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
311.69 KB
Description:
Silicon n-channel igbt.
GT15J321_ToshibaSemiconductor.pdf
GT15J321_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT15J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
311.69 KB
Description:
Silicon n-channel igbt.
GT15J321, Silicon N-Channel IGBT
GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit: mm The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector.
Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector
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