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GT15J321 Datasheet - Toshiba Semiconductor

GT15J321 Silicon N-Channel IGBT

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit: mm The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector. Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector.

GT15J321_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT15J321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

311.69 KB

Description:

Silicon n-channel igbt.

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GT15J321 GT15J321 Silicon N-Channel IGBT Toshiba Semiconductor