Datasheet4U Logo Datasheet4U.com

GT15J331 Datasheet - Toshiba Semiconductor

GT15J331 Silicon N-Channel IGBT

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit: mm The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) FRD included between Emitter and collector. Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector.

GT15J331_ToshibaSemiconductor.pdf

Preview of GT15J331 PDF
GT15J331 Datasheet Preview Page 2 GT15J331 Datasheet Preview Page 3

Datasheet Details

Part number:

GT15J331

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

181.49 KB

Description:

Silicon n-channel igbt.

GT15J331 Distributor

📁 Related Datasheet

GT15J301 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT15J311 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT15J321 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT15J341 Silicon N-Channel IGBT (Toshiba)

GT15J101 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT15J102 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT15J103 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT15J121 Silicon N-Channel IGBT (Toshiba Semiconductor)

TAGS

GT15J331 GT15J331 Silicon N-Channel IGBT Toshiba Semiconductor