GT15J331 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit:.

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Datasheet Specifications

Part number: GT15J331
Manufacturer: Toshiba ↗ Semiconductor
File Size: 181.49 KB
Datasheet: GT15J331_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Motor Control Applications Unit: mm
* The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ. ) Low Saturation Voltage: VCE (sat) = 1.75 V (typ. ) FRD included between Emitter and collector. Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage

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GT15J331 Silicon N-Channel IGBT Toshiba Semiconductor

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