GT15J331 Datasheet (Toshiba Semiconductor)

GT15J331, Silicon N-Channel IGBT

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit: mm The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) FRD included between Emitter and collector.

Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector