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GT15J331 Datasheet - Toshiba Semiconductor

GT15J331 Silicon N-Channel IGBT

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit: mm The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) FRD included between Emitter and collector. Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector.

GT15J331 Datasheet (181.49 KB)

Preview of GT15J331 PDF

Datasheet Details

Part number:

GT15J331

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

181.49 KB

Description:

Silicon n-channel igbt.

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GT15J331 Silicon N-Channel IGBT Toshiba Semiconductor

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