GT15J121 Datasheet - Toshiba Semiconductor

GT15J121 Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Switching Applications Fast Switching Applications 　　　 The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) 　 :tr=0.03μs(typ.) High speed :tf=0.08μs(typ.) 　 :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.) Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage .

GT15J121_ToshibaSemiconductor.pdf