GT15J121 Datasheet - Toshiba Semiconductor

GT15J121 Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Switching Applications Fast Switching Applications 　　　 The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) 　 :tr=0.03μs(typ.) High speed :tf=0.08μs(typ.) 　 :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.) Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage .

GT15J121 Datasheet (102.87 KB)

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Datasheet Details

Part number:

GT15J121

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

102.87 KB

Description:

Silicon n-channel igbt.

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GT15J121 Silicon N-Channel IGBT Toshiba Semiconductor

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