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GT15J121 Silicon N-Channel IGBT

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Description

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Switching Applications Fast Switc.

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Applications

* Fast Switching Applications
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* 　 The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference)
* 　 :tr=0.03μs(typ. ) High speed :tf=0.08μs(typ. )
* 　 :Eon=0.23mJ(typ. ) Low switching loss :Eoff=0.18mJ(typ. ) Maximum Ratings (Ta=25℃) Ch

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GT15J121 Silicon N-Channel IGBT Toshiba Semiconductor
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