Part number:
GT15J121
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
102.87 KB
Description:
Silicon n-channel igbt.
GT15J121_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT15J121
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
102.87 KB
Description:
Silicon n-channel igbt.
GT15J121, Silicon N-Channel IGBT
TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) :tr=0.03μs(typ.) High speed :tf=0.08μs(typ.) :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.) Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage
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