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HN4G01J Datasheet - Toshiba Semiconductor

HN4G01J Multi Chip Discrece Device

HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Audio Frequency General Purpose Amplifier Applications Q1 z z z z Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Unit: mm Q2 z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Q1 : 2SC.

HN4G01J Datasheet (516.14 KB)

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Datasheet Details

Part number:

HN4G01J

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

516.14 KB

Description:

Multi chip discrece device.

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HN4G01J Multi Chip Discrece Device Toshiba Semiconductor

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