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2SK1119
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1119
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current
: IDSS = 300 µA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.5~3.
K1119 Datasheet
