K1119 Datasheet - Toshiba Semiconductor

K1119, 2SK1119

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSII.5) 2SK1119 DC *DC Converter and Motor Drive Applications .

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K1119-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K1119

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

927.39 KB

Description:

2SK1119

Applications

* z Low drain
* source ON resistance : RDS (ON) = 3.0 Ω (typ. ) z High forward transfer admittance : |Yfs| = 2.0 S (typ. ) z Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) C

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