Datasheet4U.com

K15A20D Datasheet - Toshiba Semiconductor

K15A20D TK15A20D

K15A20D Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 1 2011-10-10 Rev.2.0 TK15A20

K15A20D-ToshibaSemiconductor.pdf

K15A20D Datasheet Preview — Preview of K15A20D PDF

K15A20D Datasheet Preview Page 2

K15A20D Datasheet Preview Page 3

Datasheet Details

Part number:

K15A20D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

231.78 KB

Description:

Tk15a20d.

📁 Related Datasheet

K15A50D Silicon N-Channel MOS Type FET (Toshiba Semiconductor)

K15A60D TK15A60D (Toshiba Semiconductor)

K15A60U TK15A60U (Toshiba)

K150 Silicon Zener Diodes (Aeroflex)

K150 LOW LEVEL ZENER DIODES (Knox)

K150 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)

K150 Low Noise Audio Amplifier Applications (ETC)

K1500 2SK1500 (NEC)

TAGS

K15A20D K15A20D TK15A20D Toshiba Semiconductor

K15A20D Distributor